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Main steps in SiC substrate processing

The processing of 4H-SiC substrate mainly includes the following steps:

Key Parameters of Silicon Carbide (SiC) Substrates

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is th......

Silicon Carbide Applications

Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, ......

Introduction to the Silicon Carbide Ion Implantation and Annealing Process

In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant......

Method for preparing SiC powder

Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial w......

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